1N5719 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE

SILICON PIN DIODE
1N5719
PACKAGE STYLE 01
DESCRIPTION:
The1N5719 is a Silicon PIN Diode
Designed for General Purpose
Attenuator and Switching Applications
from 100 MHz to 3 GHz.
MAXIMUM RATINGS
I_F
100 mA
V_R
P_DISS
T_J
T_STG
θ_JC
150 V
250 mW @ T_A = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
0.7 ^OC/mW
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
C_T
V_R = 100 V
f = 1.0 MHz
R_S
I_F = 100 mA
τ
I_F = 50 mA
t_rr
V_R = 10 V
f = 100 MHz
I_R = 250 mA
f = 20 mA
MINIMUM
150
100
TYPICAL
100
MAXIMUM
0.3
1.25
UNITS
V
pF
Ω
µS
µS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1