1N5709B Datasheet, PDF (1/1 Pages) Advanced Semiconductor – ABRUPT VARACTOR DIODE

1N5709B
ABRUPT VARACTOR DIODE
DESCRIPTION:
The ASI 1N5709B is an Abrupt Varactor
Diode, designed for general purpose
applications.
MAXIMUM RATINGS
I_R
20 nA
V_R
70 V
P_DISS
400 mW @ T_A = 25 °C
T_J
-65 °C to +175 °C
T_STG
-65 °C to +200 °C
θ_JC
250 °C/W
PACKAGE STYLE DO-7
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
I_R
V_R = 60 V
T_A = 150 °C
C_T
V_R = 4.0 V
f = 1.0 MHz
C_T4/C_T60 V_R = 4.0 V/V_R = 60 V
f = 1.0 MHz
Q
V_R = 4.0 V
f = 50 MHz
MINIMUM
65
77.9
3.2
150
TYPICAL MAXIMUM
20
20
86.1
3.4
UNITS
V
nA
µA
pF
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Specifications are subject to change without notice.
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