1N53 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON MIXER DIODE

SILICON MIXER DIODE
1N53
DESCRIPTION:
The ASI 1N53 is a Silicon Mixer
Diode Designed for low noise
performance in
Ka-Band Applications Operating up to
35 GHz.
FEATURES:
• Low Noise Fugure
• Wider Bandwith than cartridge
diodes inX Band
PACKAGE STYLE DO- 36
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
NF
F = 9375 MHz
R_L = 100 Ω
P_lo = 1.0 mW
I_F = 30 MHz
NF_Iif = 1.5 dB
V_SWR
Z
IF
R_L = 100 Ω
Test F = 9375 MHz
Frequency R_L = 100 Ω
P_lo = 1.0 mW
I_F = 30 MHz
f = 1000 Hz
NF_Iif = 1.5 dB
MINIMUM TYPICAL
400
35
MAXIM
13.1
1.6
800
UNITS
dB
Ω
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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