1N5290 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON CURRENT REGULATOR DIODE

1N5290
SILICON CURRENT REGULATOR DIODE
DESCRIPTION:
The 1N5290 is Silicon Constant
Current Diode Designed for General
Purpose Power Supply and Signal
Processing Applications.
FEATURES INCLUDE:
• I_P = 470 µA Nominal
• Z_T = 2.70 MΩ Minimum
• Hermetic DO-35 Package
MAXIMUM RATINGS
P_OV
P_DISS
T_J
100 V
600 mW @ T_C = 75 ^OC
-55 ^OC to +200 ^OC
T_STG
θ_JC
-55 ^OC to +200 ^OC
210 ^OC/W
PACKAGE STYLE DO-35
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
I_P
V_T = 25 V
Z_T
V_T = 25 V
Z_K
V_K = 6.0 V
V_L
I_L = 338 µA
MINIMUM TYPICAL MAXIMUM
423
517
2.70
750
1.05
UNITS
µA
mΩ
KΩ
V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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