1N4386 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON MULTIPLIER VARACTOR DIODE

1N4386
SILICON MULTIPLIER VARACTOR DIODE
DESCRIPTION:
The 1N4396 is a High Power Silicon
Multiplier Varactor Diode.
MAXIMUM RATINGS
I_F
200 mA
V_R
P_DISS
T_J
T_STG
θ_JC
250 V
20 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +175 ^OC
5.0 ^OC/W
PACKAGE STYLE DO- 4
1 = Anode
2 = Cathode
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
C_T
V_R = 6.0 V
f = 1.0 MHz
R_S
V_R = 6.0 V
f = 50 MHz
P_OUT(X3)
P_IN = 30 W
F_IN = 150 MHz
MINIMUM
250
20
15
TYPICAL
0.7
MAXIMUM
50
UNITS
V
pF
Ohms
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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