1N2927 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – GERMANIUM TUNNEL DIODE

1N2927
GERMANIUM TUNNEL DIODE
DESCRIPTION:
The 1N2927 is Designed for
Switching Applications in Industrial and
Miitary Applications.
MAXIMUM RATINGS
I_F
T_J
T_STG
T_SOLD
500 µA
-65 ^OC to +150 ^OC
-65 ^OC to +200 ^OC
10 S/250 ^OC
PACKAGE STYLE TO-18
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
I_P
I_V
V_P
V_V
V_F
I_F = 110 µA
I_R
MINIMUM
90
600
TYPICAL
MAXIMUM
110
35
75
475
1000
1.0
UNITS
µA
µA
mV
mV
mV
mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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