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1N23WG Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON MIXER DIODE | |||
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1N23WG
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WG is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
⢠High burnout resistance
⢠Low noise figure
⢠Hermetically sealed package
⢠Matched pairs available by adding
suffix âMâ or âMRâ for matched forward
and reverse
MAXIMUM RATINGS
IF
20 mA
VR
1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ
-55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 23
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
NF
F = 9375 MHz
RL = 100 â¦
Plo = 1.0 mW
IF = 30 MHz
NFif = 1.5 dB
VSWR
Z
IF
frange
RL = 22 â¦
f = 1000 Hz
MINIMUM TYPICAL
335
8.0
MAXIM
6.5
1.3
465
12.4
UNITS
dB
â¦
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE ⢠NORTH HOLLYWOOD, CA 91605 ⢠(818) 982-1200 ⢠FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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