1N23WE Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON MIXER DIODE

1N23WE
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
• High burnout resistance
• Low noise figure
• Hermetically sealed package
MAXIMUM RATINGS
I_F
20 mA
V_R
P_DISS
T_J
T_STG
1.0 V
5.0 (ERGS) @ T_C = 25 ^OC
-55 ^OC to +150 ^OC
-55 ^OC to +150 ^OC
PACKAGE STYLE DO- 23
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
NF
F = 9375 MHz
R_L = 100 Ω
P_lo = 1.0 mW
I_F = 30 MHz
N_Fif = 1.5 dB
V_SWR
Z
IF
frange
R_L = 22 Ω
f = 1000 Hz
MINIMUM TYPICAL
335
8.0
MAXIM
7.5
1.3
465
12.4
UNITS
dB
Ω
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1