ASX621_17 Datasheet, PDF (9/12 Pages) Advanced Semiconductor Business Inc. – 250 ~ 3000 MHz MMIC Amplifier

APPLICATION CIRCUIT
LTE
2620 ~ 2690 MHz
+5 V
Schematic
Vs=5 V
D1=5.6V
Zener Diode
C8=1 F
C7=100pF
L2=27 nH _{C4=1.2 pF}
(Coil Inductor)
RF IN
ASX621
C1=1.5 pF
C6=1 F
C5=100pF
L1=27 nH
(Coil Inductor)
C2=1.2 pF _{RF OUT}
2.5 mm 2 mm
C3=1.5 pF
ASX621
250 ~ 3000 MHz MMIC Amplifier
Frequency (MHz)
2620
2690
Magnitude S21 (dB)
16.9
15.5
Magnitude S11 (dB)
-18
-18
Magnitude S22 (dB)
-12
-8
Output P1dB (dBm)
33
33
Output IP3¹⁾ (dBm)
48
49
Noise Figure (dB)
5.5
5.4
Device Voltage (V)
+5
Current (mA)
1150
1) OIP3 is measured with two tones at an output power of +16
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm², 0.8T)
S-parameters
25
20
15
10
5
0
2400
0
2500
2600
2700
2800
Frequency (MHz)
2900
3000
-5
-10
-15
-20
-25
-30
2400
2500
2600
2700
2800
Frequency (MHz)
2900
3000
0
-5
-10
-15
-20
-25
-30
2400
5
2500
2600
2700
2800
Frequency (MHz)
2900
3000
4
3
2
1
0
0
500
1000 1500 2000 2500 3000 3500
Frequency [MHz]
9/12
ASB Inc.  [e-mail]  Tel: [phone]
February 2017