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AST163_17 Datasheet, PDF (8/9 Pages) Advanced Semiconductor Business Inc. – High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WCDMA
1950 MHz
+5 V / 25 mA
Schematic
AST163
High Gain, Low Noise Amplifier
Parameter
Symbol Unit
Frequency [MHz]
1950
Power Gain
Noise Figure
Gp
dB
16
NF
dB
0.65
Input Return Loss
RLin
dB
-10
Output Return Loss
RLout
dB
-14
1 dB Gain
Output Power
Compression
Po(1dB)
dBm
16
3rd Intercept Point
Output Power1)
OIP3
dBm 29
Circuit Current
Id
mA
25
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 1.2 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
20
0
15
-5
10
-10
5
-15
8/9
0
1700
0
1800
1900
2000
2100
Frequency (MHz)
2200
2300
-20
1700
5
1800
1900
2000
2100
Frequency (MHz)
2200
2300
4
-5
3
-10
2
-15
1
-20
1700
1800
1900
2000
2100
Frequency (MHz)
2200
2300
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225
February 2017