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ASF153 Datasheet, PDF (3/11 Pages) Advanced Semiconductor Business Inc. – 3 V IF Gain Block Amplifier MMIC over DC~1000 MHz
ASF153
2.4 Absolute Maximum Ratings
Parameters
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50  matched)
Max. Ratings
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
Unit
45
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 500 ~ 1000 V
MM
Class A
Voltage Level: <200 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/11
ASB Inc.  sales@asb.co.kr
August 2014