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ASF130 Datasheet, PDF (3/9 Pages) Advanced Semiconductor Business Inc. – 3 V IF Gain Block Amplifier MMIC over DC~1000 MHz
ASF130
2.4 Absolute Maximum Ratings
Parameters
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50  matched)
Max. Ratings
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
2.5 Thermal Resistance
Symbol
Rth
Description
Thermal resistance from junction to lead
Typ
Unit
110
C/W
2.6 ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 500 ~ 1000 V
MM
Class A
Voltage Level: <200 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can
be damaged by static electricity. Proper ESD control techniques should be used when
handling these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/9
ASB Inc.  sales@asb.co.kr
July 2014