ASX1536 Datasheet, PDF (2/13 Pages) Advanced Semiconductor Business Inc. – Ku Band Power Amplifier MMIC

ASX1536
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Min
Gate Bias Voltage
f = 13.5 - 16.0 GHz
Output Power at Psat¹⁾
f = 13.5 – 15.0 GHz
Output Power at Psat¹⁾
f = 15.5 GHz
Output Power at Psat¹⁾
f = 16.0 GHz
Small signal gain
f = 13.5 - 16.0 GHz
Input Return Loss
f = 13.5 - 16.0 GHz
Output Return Loss
f = 13.5 - 16.0 GHz
Supply Current
VDD = +7 V
1) Psat: Saturated output power
Typ
Max Units
-0.99
V
37
dBm
36
dBm
35
dBm
22
dB
-9
dB
-9
dB
1300
mA
2.2 Product Specification
Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -0.99 V typical, ZO = 50 
Parameter
Min
Typ
Max
Unit
Frequency
13.5
16.00
GHz
Small Signal Gain
22
dB
Input Return Loss
-9
dB
Output Return Loss
-9
dB
Supply Current
1300
mA
2.3 Absolute Maximum Ratings
Parameters
Operating Case Temperature (Tc)
Storage Temperature (Tstg)
Drain Voltage (VDD)
Gate Voltage (VGG)
Input RF Power (Pin)
Max. Ratings
-40 to 85 C
-55 to 125 C
+9 V
-1.5 to -0.5 V
23dBm
2/13
ASB Inc.  [e-mail]
January 2017