ASX1037 Datasheet, PDF (2/14 Pages) Advanced Semiconductor Business Inc. – X Band Power Amplifier MMIC

ASX1037
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Min
Gate Bias Voltage
f = 8.5 - 10.5 GHz
Output Power at Psat¹⁾
f = 8.5 - 10.5 GHz
36
Power Gain at Psat¹⁾
f = 8.5 - 10.5 GHz
11
Drain Current at Psat¹⁾
f = 8.5 - 10.5 GHz
Power Added Efficiency at Psat¹⁾ f = 8.5 - 10.5 GHz
Gain Flatness
f = 8.5 - 10.5 GHz
Input Return Loss
f = 8.5 – 10.5 GHz
Output Return Loss
Output TOI²⁾
f = 8.5 - 10.5 GHz
Δf = 10 MHz
2-Tone Test
Output power / Tone = +28 dBm
Supply Current
VDD = +7 V
1) Psat: Saturated output power
2) TOI: Third order intercept point
Typ
Max Units
-1.05
-0.6 V
37
dBm
12
dB
1800
2200 mA
38
%
1.5
2.0 dB
-10
-6
dB
-12
-8
dB
42
dBm
1300
mA
2.2 Product Specifications
Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -1.05 V typical, ZO = 50 
Parameter
Min
Typ
Max
Unit
Frequency
8.5
10.5
GHz
Small Signal Gain
14
15
dB
Input Return Loss
-10
-6
dB
Output Return Loss
-12
-8
dB
Supply Current
1300
mA
2.3 Absolute Maximum Ratings
Parameters
Operation Case Temperature (Tc)
Storage Temperature (Tstg)
Drain Voltage (VDD)
Gate Voltage (VGG)
Input RF Power (CW)
Max. Ratings
-40 to 85 C
-55 to 125 C
+9 V
-5.0 to -0.6 V
+30 dBm
2/14
ASB Inc.  [e-mail]
June 2017