AWB688 Datasheet, PDF (1/9 Pages) Advanced Semiconductor Business Inc. – DC ~ 1500 MHz Wideband MMIC Amplifier

AWB688
DC ~ 1500 MHz Wideband MMIC Amplifier
Features
 DC ~ 1200 MHz, 50  Application
 For 30 ~ 860 MHz 50  Matching @ Vdevice = +10 V, Idd = 300 mA:
 22.8 dB Gain at 500 MHz
 30 dBm OP1dB
 45.5 dBm Output IP3
 2.2 dB NF
AWB688
Package Style: SOIC8
Typical Performance
(Supply Voltage = +10 V, T_A = +25 C, Z₀ = 50 )
Parameters
Units
Typical
Frequency
MHz
30
50
500
Gain
dB
22.2
22.5
22.8
S11
dB
-12
-13
-20
S22
Output IP3¹⁾
dB
-10
dBm
47.0
-11
47.5
-17
45.5
Noise Figure
dB
1.7
1.8
2.2
Output P1dB
dBm
27.0
29.0
30.0
Current
mA
300
300
300
Device Voltage
V
+10
+10
+10
1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ.
500
22.8
-20
-17
45.5
2.2
30.0
300
+10
860
22.5
-10
-10
45.0
2.1
30.5
300
+10
Max
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (Continuous)
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+13 V
+150 C
+22 dBm
+14 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Applications
 Wide Band
(30 ~ 860 MHz, 10 V, 300 mA)
 Wide Band
(30 ~ 860 MHz, 12 V, 291 mA)
 IF
(200 ~ 400 MHz, 10 V, 320 mA)
 IF
(0.3 ~ 30 MHz, 9 V, 160 mA)
 IF
(20 ~ 1000 MHz, 11 V, 283 mA)
Pin Configuration
Pin No. Function
1,3,5,6,8 NC or GND
2
RF IN
7
RF OUT
4
Current
Adjustable
1/9
ASB Inc.  [e-mail]  Tel: [phone]
January 2014