AWB459 Datasheet, PDF (1/12 Pages) Advanced Semiconductor Business Inc. – Wide band MMIC Amplifier

AWB459
Wide band MMIC Amplifier
Features
 20 dB Gain at 1200 MHz
 23.5 dBm P1dB at 1200 MHz
 38 dBm Output IP3 at 1200 MHz
 1.25 dB NF
 +5 V Single Supply
AWB459
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 °C, Z0 = 50 Ω)
Parameters
Units
Typical
Frequency
MHz
30
512
Gain
dB
24.0 23.5
S11
dB
-15
-16
S22
Output IP3¹⁾
dB
dBm
-15
-16
40
40
Noise Figure
dB
0.8
1.1
Output P1dB
dBm
23.0 23.5
Current
mA
130
130
Device Voltage
V
+5
+5
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
800
20.0
-12
-18
39
1.2
23.5
130
+5
1200
20.0
-14
-12
38
1.25
23.5
130
+5
1600
20.5
-13
-10
38
1.4
24.0
130
+5
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ.
Max
1200
20.0
-14
-12
38
1.25
23.5
110
130
+5
Applications
 IF 1.5 ~ 500 MHz (6.5 V)
 IF 30 ~ 512 MHz (5 V & 8 V)
 DVB 470 ~ 800 MHz (5 V & 8 V)
 IF 1.5 ~ 1000 MHz (8 V)
 MoCA
(800 ~ 1600 MHz, 5 V & 8 V)
 Wide Band
(1000 ~ 2000 MHz, 5 V & 8 V)
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (Continuous)
Rating
-40 to +85 °C
-40 to +150 °C
+10 V
+150 °C
+22 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin No.
1
2
3
Function
RF IN
GND
RF OUT & Bias
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ASB Inc. • [e-mail] • Tel: [phone]
January 2015