ASX601_17 Datasheet, PDF (1/15 Pages) Advanced Semiconductor Business Inc. – 250 ~ 2500 MHz MMIC Amplifier

ASX601
250 ~ 2500 MHz MMIC Amplifier
Features
 16 dB Gain at 900 MHz
 32.7 dBm P1dB at 900 MHz
 49 dBm Output IP3 at 900 MHz
 MTTF > 100 Years
 Single Supply
Description
The ASX601, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 2.5 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Typical
Frequency
MHz
900
2000
900
Gain
dB
16.0
9.5
16.0
S11
dB
-18
-14
-18
S22
dB
-14
-12
-14
Output IP3¹⁾
dBm
49
47
44
Noise Figure
dB
5.6
5.8
5.6
Output P1dB
dBm
32.7
31.0
32.0
Current
mA
850
850
710
Device Voltage
V
+5
+5
+4.7
1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
2000
9.5
-14
-12
43
5.8
31.0
710
+4.7
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
15.0
16.0
-18
-14
47
49
5.6
5.9
32.0
32.7
820
850
900
+5
ASX601
Package Style: SOT89
Application Circuit
 IF (350 MHz)
 IF (440 ~ 460 MHz)
 Others (715 ~ 725 MHz)
 CDMA
 RFID (USA)
 GSM
 Others (1400 ~ 1500 MHz)
 PCS
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)¹⁾
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
14 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin No. Function
1
RF IN
2
GND
3
RF OUT / Bias
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ASB Inc.  [e-mail]  Tel: [phone]
February 2017