ASX521 Datasheet, PDF (1/12 Pages) Advanced Semiconductor Business Inc. – 250-3000 MHz MMIC Amplifier

ASX521
250-3000 MHz MMIC Amplifier
Features
·19 dB Gain at 2000 MHz
·31.5 dBm P1dB at 2000 MHz
·48 dBm OIP3 at 2000 MHz
·MTTF > 100 Years
·Two Power Supplies
Description
The ASX521, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 3 GHz. The amplifier is available in
an SOIC-8 package and passes through the strin-
gent DC, RF, and reliability tests.
Typical Performance
Parameters Units
Typical
Freq.
MHz 900 2000 2450 900 2000 2450 900 2000 2450 2700
Gain
dB 28 19 18.5 28 19 18.5 28 19 18.5 16.5
S11
dB -15 -16 -18 -15 -16 -18 -15 -16 -18 -15
S22
OIP3¹⁾
dB -11 -9 -15 -11 -9 -15 -11 -9 -15 -15
dBm 44 44 44 47 45 45 48 48 48 48
NF
dB
9
5
5.1 10
5
5.1 11 5.6 5.1 5.3
P1dB
dBm 30.5 30 30 32 31.5 31.5 32 31.5 31.5 31.5
Current
mA
510
650
870
Voltage
V
4.3
4.7
5
* Performance tested at 50 W system and a room temperature.
1) OIP3 measured with two tones at an output power of +14 dBm/tone separated by 1 MHz.
Package Style: SOIC-8
Application Circuit
·CDMA
·GSM
·WCDMA
·WiBro
·WLAN
·WiMAX
Product Specifications*
Parameters
Units
Min
Typ
Max
Testing Frequency
MHz
2000
Gain
dB
18
19
S11
dB
-16
S22
dB
-9
Output IP3
dBm
46
48
Noise Figure
dB
5.6
5.8
Output P1dB
dBm
30
31.5
Current
mA
840
870
900
Device Voltage
V
5
* 100% in-house DC & RF testing is done on packaged products before taping.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
Rating
-40 to +85°C
-40 to +150°C
+6 V
+150°C
25 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin Configuration
Pin No.
1
Function
2nd stage RF IN
2
1st stage RF OUT
3,5,8
GND
4
1st stage RF IN
6,7 2nd stage RF OUT
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ASB Inc. · [e-mail] · Tel: [phone]
February 2010