ASX520_17 Datasheet, PDF (1/11 Pages) Advanced Semiconductor Business Inc. – Gain Block Amplifier MMIC over DC ~1000MHz

ASX520
250 ~ 3000 MHz MMIC Amplifier
Features
 31 dB Gain at 900 MHz
 33 dBm P1dB at 900 MHz
 48 dBm Output IP3 at 900 MHz
 MTTF > 100 Years
 Two Power Supplies
Description
The ASX520, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 3 GHz. The amplifier is available in
a SOIC package and passes through the stringent
DC, RF, and reliability tests.
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
31.0
S11
dB
-15
S22
dB
-9
Output IP3¹⁾
dBm
48
Noise Figure
dB
7.0
Output P1dB
dBm
33
Current
mA
650
Device Voltage
V
+5
1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
Package Style: SOIC8
Application Circuit
 IF (400 ~ 430 MHz)
 LTE (700 ~ 800 MHz)
 CDMA
 GSM
 RFID (USA)
 Others (1250 ~ 1300 MHz)
 Others (950 ~ 1240 MHz)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
30.0
31.0
-15
-9
45
48
7.0
7.3
32
33
610
650
690
+5
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)¹⁾
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
18 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin Configuration
Pin No. Function
1
2nd stage RF IN
2
1st stage RF OUT
3,5,8 GND
4
1st stage RF IN
6,7
2nd stage RF OUT
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ASB Inc.  [e-mail]  Tel: [phone]
February 2017