ASX520 Datasheet, PDF (1/9 Pages) Advanced Semiconductor Business Inc. – 250-3000 MHz MMIC Amplifier

ASX520
250-3000 MHz MMIC Amplifier
Features
·31 dB Gain at 900 MHz
·33 dBm P1dB at 900 MHz
·48 dBm Output IP3 at 900 MHz
·MTTF > 100 Years
·Two Power Supplies
Description
The ASX520, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 3 GHz. The amplifier is available in
an SOIC-8 package and passes through the strin-
gent DC, RF, and reliability tests.
Typical Performance^*
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
31
S11
dB
-15
S22
Output IP3¹⁾
dB
-9
dBm
48
Noise Figure
dB
7.0
Output P1dB
dBm
33
Current
mA
650
Device Voltage
V
5
* Performance tested at 50 W system and a room temperature.
1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
Product Specifications*
Parameters
Units
Min
Typ
Max
Testing Frequency
MHz
900
Gain
dB
30
31
S11
dB
-15
S22
dB
-9
Output IP3
dBm
45
48
Noise Figure
dB
7.0
7.3
Output P1dB
dBm
32
33
Current
mA
610
650
690
Device Voltage
V
5
* 100% in-house DC & RF testing is done on packaged products before taping.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
Rating
-40 to +85°C
-40 to +150°C
+6 V
+150°C
25 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Package Style: SOIC-8
Application Circuit
·400 ~ 430 MHz
·700 ~ 800 MHz
·CDMA
·GSM
·RFID(USA)
·1250 ~ 1300 MHz
Pin Configuration
Pin No.
1
Function
2nd stage RF IN
2
1st stage RF OUT
3,5,8
GND
4
1st stage RF IN
6,7 2nd stage RF OUT
1/9
ASB Inc. · [e-mail] · Tel: [phone]
February 2010