ASX501_17 Datasheet, PDF (1/15 Pages) Advanced Semiconductor Business Inc. – 250 ~ 2500 MHz MMIC Amplifier

ASX501
250 ~ 2500 MHz MMIC Amplifier
Features
 18dB Gain at 900 MHz
 31.5 dBm P1dB at 900 MHz
 47 dBm Output IP3 at 900 MHz
 MTTF > 100 Years
 Single Supply
Description
The ASX501, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 2.5 GHz. The amplifier is available
in a SOT89 package and passes through the strin-
gent DC, RF, and reliability tests.
ASX501
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Typical
Frequency
MHz
900
2000
900
Gain
dB
18.0
11.5
18.0
S11
dB
-16
-15
-16
S22
dB
-17
-13
-17
Output IP3
dBm
47¹⁾
47²⁾
44¹⁾
Noise Figure
dB
4.7
5.0
4.7
Output P1dB
dBm
31.5
31.0
31.5
Current
mA
560
560
457
Device Voltage
V
+5
+5
+4.7
1) OIP3 measured with two tones at an output power of +12 dBm/tone separated by 1 MHz.
2) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
2000
11.5
-15
-13
44²⁾
5.0
31
457
+4.7
Package Style: SOT89
Application Circuit
 IF (450 ~ 470 MHz)
 LTE
 CDMA
 GSM
 PCS
 WCDMA
 RFID
(908 ~ 923 MHz, balanced)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
18.0
18.0
-16
-17
46
47
4.7
4.8
29.5
31.5
520
560
600
+5
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)¹⁾
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
23 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
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ASB Inc.  [e-mail]  Tel: [phone]
Pin No. Function
1
RF IN
2
GND
3
RF OUT / Bias
February 2017