ASX201 Datasheet, PDF (1/21 Pages) Advanced Semiconductor Business Inc. – 250 ~ 5000 MHz MMIC Amplifier

ASX201
250 ~ 5000 MHz MMIC Amplifier
Features
 16 dB Gain at 2 GHz
 21 dBm P1dB at 2 GHz
 34.5 dBm Output IP3 at 2 GHz
 MTTF > 100 Years
 Single Supply
Description
The ASX201, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 5 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
ASX201
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, T_A = +25 C, Z₀ = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
2450
Gain
dB
19.0
16.0
14.0
S11
dB
-13
-15
-15
S22
Output IP3¹⁾
dB
-13
-18
-18
dBm
34.0
34.5
36.0
Noise Figure
dB
4.0
3.3
3.3
Output P1dB
dBm
20
21
22
Current
mA
66
66
66
Device Voltage
V
+4.8
+4.8
+4.8
1) OIP3 measured with two tones at an output power of +5 dBm/tone separated by 1 MHz
3500
12.0
-14
-14
34.0
3.2
20
66
+4.8
Product Specifications
Parameters
Units
Testing Frequency
Gain
MHz
dB
S11
S22
Output IP3
Noise Figure
dB
dB
dBm
dB
Output P1dB
Current
Device Voltage
dBm
mA
V
Min
Typ
Max
2000
15.0
16.0
-15
-18
33.0
34.5
3.3
3.5
20
21
61
66
72
+4.8
Application Circuit
 IF (450 MHz)
 LTE
 CDMA
 GSM
 PCS
 WCDMA
 WiBro
 WLAN
 WiMAX
 C-Band (4500 MHz)
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)¹⁾
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+25 dBm
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin No. Function
1
RF IN
2
GND
3
RF OUT / Bias
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ASB Inc.  [e-mail]  Tel: [phone]
September 2013