ASW338_17 Datasheet, PDF (1/19 Pages) Advanced Semiconductor Business Inc. – 5 ~ 4000 MHz MMIC Amplifier

ASW338
5 ~ 4000 MHz MMIC Amplifier
Features
 17.5 dB Gain at 900 MHz
 26 dBm P1dB at 900 MHz
 44 dBm Output IP3 at 900 MHz
 2.0 dB NF at 900 MHz
 MTTF > 100 Years
 Single Supply
Description
The ASW338, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both re-
ceiver and transmitter of telecommunication systems
up to 4 GHz. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
ASW338
Package Style: SOT89
Typical Performance
(Supply Voltage = +8 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
17.5
S11
dB
-14
S22
Output IP3
dB
-18
dBm
44¹⁾
Noise Figure
dB
2.0
Output P1dB
dBm
26
Current
mA
120
Device Voltage
V
+8
1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz.
2) OIP3 is measured with two tones at an output power of +7 dBm/tone separated by 1 MHz.
1950
16.5
-14
-14
43²⁾
2.2
25
120
+8
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
17.0
17.5
18.0
-14
-18
44
2.0
2.2
25
26
110
120
130
+8
Application Circuit
 IF (100 ~ 300 MHz)
 RFID (13.5 MHz)
 IF (10 ~ 100 MHz)
 IF (30 ~ 520 MHz)
 IF (140 +/- 25 MHz)
 LTE (698 ~ 787 MHz)
 CMMB
 CDMA & GSM (900 MHz)
 LTE (1745 ~ 1860 MHz)
 Wide Band (1700 ~ 2700 MHz)
 Wide Band (50 ~ 1500 MHz)
 Wide Band (350 ~ 3000 MHz)
 CATV (50 ~ 1000 MHz, 75 )
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
Storage Temperature
-40 to 85 C
-40 to 150 C
Device Voltage
+9 V
Operating Junction Temperature
Input RF Power
(CW, 50  matched as in 1950 MHz application circuit)*
Thermal Resistance
+150 C
+26 dBm
43 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Max. input power, in principle depends upon the application frequency and the matching circuit.
1/19
ASB Inc.  [e-mail]  Tel: [phone]
Pin No.
1
2
3
Function
RF IN
GND
RF OUT & Bias
February 2017