English
Language : 

ASW314 Datasheet, PDF (1/23 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier
ASW314
5 ~ 3000 MHz MMIC Amplifier
Features
 16 dB Gain at 900 MHz
 21 dBm P1dB at 900 MHz
 44 dBm Output IP3 at 900 MHz
 1.9 dB NF at 900 MHz
 MTTF > 100 Years
 Single Supply
Description
The ASW314, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both re-
ceiver and transmitter of telecommunication systems
up to 3 GHz. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
5
150
900
Gain
dB
13.7
16.2
16.0
S11
S22
Output IP3
Noise Figure
dB
dB
dBm
dB
-13
-13
-20
-12
-13
-15
401)
411)
442)
2.9
1.7
1.9
Output P1dB
dBm
20.0
22.0
21.0
Current
mA
105
105
105
Device Voltage
V
+5
+5
+5
1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz.
2) OIP3 is measured with two tones at an output power of +7 dBm/tone separated by 1 MHz.
3) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ.
900
15.0
16.0
-20
-15
41
44
1.9
20
21
85
105
+5
1950
14.5
-13
-13
432)
3.0
23.0
105
+5
2700
14.5
-18
-11
383)
3.1
20.5
105
+5
Max
2.2
125
ASW 313
ASW314
Package Style: SOT89
Application Circuit
 IF (80 ~ 450 MHz)
 170 ~ 794 MHz
 LTE (698 ~ 787 MHz)
 CMMB
 900 MHz
 LTE (1745 ~ 1860 MHz)
 1880 ~ 2025 MHz
 1950 MHz
 2300 ~ 2400 MHz
 2400 MHz
 2700 MHz
 800 ~ 1500 MHz
(MoCA, 50 )
 900 ~ 2200 MHz
(SMATV, 50 )
 20 ~ 3000 MHz
 500~ 3000 MHz
 5 ~ 1000 MHz
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
Storage Temperature
Device Voltage
-40 to 85 C
-40 to 150 C
+6 V
Operating Junction Temperature
Input RF Power
(CW, 50  matched as in 900 MHz application circuit)*
Thermal Resistance
+150 C
+23 dBm
60 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Max. input power, in principle depends upon the application frequency and the matching circuit.
1/23
ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225
Pin No. Function
1
RF IN
2
GND
3
RF OUT & Bias
February 2017