ASW216 Datasheet, PDF (1/5 Pages) Advanced Semiconductor Business Inc. – 5-4000 MHz MMIC Amplifier

ASW216
5-4000 MHz MMIC Amplifier
Features
·14 dB Gain at 900 MHz
·20 dBm P1dB at 900 MHz
·37.5 dBm OIP3 at 900 MHz
·2.2 dB NF at 900 MHz
·MTTF > 100 Years
·Single Supply
Description
The ASW216, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both re-
ceiver and transmitter of telecommunication systems
up to 4 GHz. The amplifier is available in an SOT-89
package and passes through the stringent DC, RF,
and reliability tests.
Typical Performance
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
14
S11
dB
-14
S22
Output IP3¹⁾
dB
-15
dBm
37.5
Noise Figure
dB
2.2
Output P1dB
dBm
20
Current
mA
80
Device Voltage
V
4.5
1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
2000
11.8
-14
-14
38
2.4
20
80
4.5
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
13
14
-14
-15
36
37.5
2.2
2.6
19
20
70
80
110
4.5
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
Rating
-40 to +85°C
-40 to +150°C
+6 V
+150°C
25 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
ASW216
Package Style: SOT-89
Application Circuit
·500 ~ 3500 MHz
Pin Configuration
Pin No.
1
2
3
Function
RF IN
GND
RF OUT / Bias
1/5
ASB Inc. · [e-mail] · Tel: [phone]
February 2010