ASW215_17 Datasheet, PDF (1/9 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier

ASW215
5 ~ 4000 MHz MMIC Amplifier
Features
 16 dB Gain at 900 MHz
 19 dBm P1dB at 900 MHz
 37 dBm Output IP3 at 900 MHz
 3.8 dB NF at 900 MHz
 MTTF > 100 Years
 Single Supply
Description
The ASW215, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 4 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
ASW215
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
Gain
dB
16
12
S11
dB
-18
-15
S22
Output IP3¹⁾
dB
dBm
-18
-18
37
35
Noise Figure
dB
3.8
4.3
Output P1dB
dBm
19
19
Current
mA
83
83
Device Voltage
V
+4.9
+4.9
1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ.
900
15
16
-18
-18
35
37
3.8
18
19
78
83
+4.9
3500
10
-18
-18
28
4.8
16
83
+4.9
Max
4.0
90
Application Circuit
 5 ~ 42 MHz
 IF
 500 ~ 3500 MHz
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)*
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
25 dBm
158 C/W
Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin No.
1
2
3
Function
RF IN
GND
RF OUT & Bias
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ASB Inc.  [e-mail]  Tel: [phone]
April 2017