ASW135_17 Datasheet, PDF (1/6 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier

ASW135
5 ~ 4000 MHz MMIC Amplifier
Features
 16.5 dB Gain at 2000 MHz
 18.5 dBm P1dB at 2000 MHz
 29 dBm Output IP3 at 2000 MHz
 1.8 dB NF at 2000 MHz
 MTTF > 100 Years
Single Supply
Description
The ASW135, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 4 GHz. The amplifier is available in a
SOT363 package and passes through the stringent
DC, RF, and reliability tests.
Typical Performance
(Supply Voltage = +3.3 V, TA = +25 C, Zo = 50 )
Parameters
Units
Typical
Frequency
MHz
150
900
2000
Gain
dB
19.6 18.5 16.5
S11
dB
-10
-14
-14
S22
Output IP3¹⁾
dB
dBm
-15
-15
-15
27.5 28.5 29.0
Noise Figure
dB
1.9
1.8
1.8
Output P1dB
dBm
17.5 17.5 18.5
Current
mA
60
60
60
Device Voltage (V)
V
+3.3 +3.3 +3.3
1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
2400
15.7
-15
-14
31.0
1.8
17.0
60
+3.3
2700
15.0
-16
-13
32.5
1.9
17.0
60
+3.3
Package Style: SOT363
Package Style: SOT-363
Application Circuit
500 ~ 3500 MHz
IF (50 ~ 450 MHz)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage (V)
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
2000
16.5
-14
-15
29
1.8
18.5
60
+3.3
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage (V)
Operating Junction Temperature
Input RF Power (CW, 50  matched)*
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+4.3 V
+150 C
+20 dBm
125 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin Configuration
Pin No.
1
4
2,3,5,6
Function
RF OUT & Bias
RF IN
GND
1/6
ASB Inc.  [e-mail]  Tel: [phone]
April 2017