ASW135 Datasheet, PDF (1/5 Pages) Advanced Semiconductor Business Inc. – 5-4000 MHz MMIC Amplifier

ASW135
5-4000 MHz MMIC Amplifier
Features
·16.5 dB Gain at 2000 MHz
·18.5 dBm P1dB at 2000 MHz
·29 dBm Output IP3 at 2000 MHz
·1.8 dB NF at 2000 MHz
·MTTF > 100 Years
·Single Supply
Description
The ASW135, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 4 GHz. The amplifier is available in an
SOT-363 package and passes through the stringent
DC, RF, and reliability tests.
Typical Performance
Parameters
Units
Typical
Frequency
MHz
150
900 2000
Gain
dB
19.6 18.5 16.5
S11
dB
-10
-14
-14
S22
Output IP3¹⁾
dB
dBm
-15
-15
-15
27.5 28.5
29
Noise Figure
dB
1.9
1.8
1.8
Output P1dB
dBm
17.5 17.5 18.5
Current
mA
60
60
60
Device Voltage (V)
V
3.3
3.3
3.3
1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
2400
15.7
-15
-14
31
1.8
17
60
3.3
2700
15
-16
-13
32.5
1.9
17
60
3.3
Package Style: SOT-363
Package Style: SOT-363
Application Circuit
·500 ~ 3500 MHz
·IF ( 50 ~ 450 MHz )
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage (V)
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
2000
16.5
-14
-15
29
1.8
18.5
60
3.3
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage (V)
Operating Junction Temperature
Input RF Power (CW, 50 ohm matched)*
Rating
-40 to +85°C
-40 to +150°C
+4.3 V
+150°C
20 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin Configuration
Pin No.
1
4
2,3,5,6
Function
RF OUT / Bias
RF IN
GND
1/5
ASB Inc. · [e-mail] · Tel: [phone]
July 2011