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ASW103_17 Datasheet, PDF (1/8 Pages) Advanced Semiconductor Business Inc. – MMIC Amplifier | |||
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ASW103
5 ~ 4000 MHz MMIC Amplifier
Features
ï 17 dB Gain at 900 MHz
ï 17 dBm P1dB at 900 MHz
ï 30 dBm Output IP3 at 900 MHz
ï 3.7 dB NF at 900 MHz
ï MTTF > 100 Years
ï Single Supply
Description
The ASW103, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both re-
ceiver and transmitter of telecommunication systems
up to 4 GHz. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
ASW103
Package Style: SOT89
Typical Performance
(Supply Voltage = +3.3 V, TA = +25 ï°C, Zo = 50 ï)
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
17
S11
dB
-9
S22
Output IP31)
dB
-15
dBm
30
Noise Figure
dB
3.7
Output P1dB
dBm
17
Current
mA
44
Device Voltage
V
+3.3
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2000
11
-9
-15
31
3.9
18
44
+3.3
Application Circuit
ï IF
ï IF (+3.4 V)
ï IF (100 ~350MHz), +5V & 50mA
ï 500 ~ 2500 MHz
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Min
Typ
Max
900
16
17
-9
-15
29
30
3.7
4.0
16
17
39
44
49
+3.3
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50 ï matched)*
Thermal Resistance
Rating
-40 to ï«85 ï°C
-40 to ï«150 ï°C
+4 V
+150 ï°C
+25 dBm
210 ï°C/W
Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin No. Function
1
RF IN
2
GND
3
RF OUT & Bias
1/8
ASB Inc. ï· sales@asb.co.kr ï· Tel: +82-42-528-7225
April 2017
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