ASL52D6_17 Datasheet, PDF (1/8 Pages) Advanced Semiconductor Business Inc. – High Gain, Low Noise Amplifier

ASL52D6
High Gain, Low Noise Amplifier
Features
Description
 21 dB Gain at 1950 MHz
 34 dBm OIP3 at 1950 MHz
 18 dBm P1dB at 1950 MHz
 0.65 dB NF at 1950 MHz
 S11 < -18 dB
 MTTF > 100 Years
 Single Supply
Typical Performance
ASL52D6 is an easy-to-use low noise, high gain,
and high linearity over a wide range of frequency
up to 5 GHz. It is also suitable for use in the low
noise amplifier block of the mobile wireless
systems of PCS, WCDMA, WiBro, WiMAX, and
WLAN so on. It has an active bias network for
stable current over temperature and process
variation. The amplifier is available in a DFN6
package and passes the stringent DC, RF, and
reliability tests.
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Testing Frequency MHz
900
1950
Gain
dB
24
21
S11
dB
-18
-18
S22
dB
-10
-10
Output IP3¹⁾
dBm
33
34
Noise Figure
dB
0.55
0.65
Output P1dB
dBm
19
18
Current
mA
50
50
Device Voltage
V
+5
+5
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Product Specifications¹⁾
Parameters
Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
Min
Typ
Max
MHz
1950
dB
21
dB
-18
dB
-10
dBm
34
dB
0.65
dBm
18
mA
50
V
+5
1)100% in-house DC & RF testing is done on packaged products before taping
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50 Ω matched)¹⁾
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+6 V
+150 C
+22 dBm
135 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/8
ASB Inc.  [e-mail]  Tel: [phone]
Package Style: DFN6
Application Circuit
 900 MHz
 GPS 1500 ~ 1600 MHz
 1950 MHz
 TETRA 360 ~ 450 MHz
Pin Configuration
Pin No.
1
2
5
3, 4, 6
Backside
paddle
Function
Bias
RF IN
RF OUT
NC & GND
GND
April 2017