ASL30G_17 Datasheet, PDF (1/22 Pages) Advanced Semiconductor Business Inc. – DC MMIC LNA

ASL30G
DC ~ 6000 MHz MMIC LNA
Features
 Two-stage LNA
 30 dB gain & 0.8 dB NF at 1575 MHz
GPS, GLONASS, Galileo and Compass
 Unconditionally Stable
 Need only 6 components
 2 kV Contact Discharge ESD Rating
achievable with one external L (Refer to
an application circuit at page 8, 14)
Description
ASL30G is a two-stage LNA for GPS, GLONASS,
Galileo and Compass receiver low noise block. It has a
low noise, high gain, and high linearity over a wide
range of frequency up to 6 GHz. It is also suitable for
use in the low noise amplifier block of the mobile
wireless system. The amplifier is available in a SOT363
package and passes the stringent DC, RF, and reliability
tests.
“AEC-Q100 Qualified”
Typical Performance
(Supply Voltage = +3 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
36
S11
dB
-18
S22
dB
-18.0
S12
dB
-40
Output IP3¹⁾
dBm
22
Noise Figure
dB
0.9
Output P1dB
dBm
11
Current
mA
20
Device Voltage
V
+3
1575
30
-20
-16.0
-38
22
0.8
11
20
+3
1950
23
-20
-18.0
-34
21
1.1
11
20
+3
2400
23
-20
-18.0
-34
21
1.1
11
20
+3
3500
17
-18
-13.5
-28
18
1.6
8
22
+3
Package Style: SOT363
Application Circuit
 GPS,GLONASS,Galileo,Compass
 1559 MHz ~ 1610 MHz
(3 V, 4 V, 3.3 V, 1.8 V)
 1559 MHz ~ 1610 MHz
(Robust ESD,  2 kV)
 1164 MHz ~ 1300 MHz (3 V, 3.3 V)
 1164 MHz ~ 1300 MHz
1) OIP3 is measured with two tones at an output power of -3 dBm/tone separated by 1MHz.
(Robust ESD,  2 kV)
Product Specifications*
Parameters
Units
Min
Typ
Max
Frequency
MHz
1575
Gain
dB
28
S11
dB
-10
S22
dB
-10
S12
dB
Output IP3
dBm
20
Noise Figure
dB
Output P1dB
dBm
10
Current
mA
17
Device Voltage
V
30
33
-20
-16
-38
22
0.8
1.2
11
20
25
+3
100% in-house DC & RF testing is done on packaged products before taping.
Absolute Maximum Ratings
Others
 900 MHz (3 V, 4 V)
 1950 MHz (3 V, 4 V)
 2400 MHz (3 V, 4 V)
 3300 ~ 3800 MHz (3 V, 4 V)
Pin Configuration
Parameters
Rating
Operating Case Temperature
Storage Temperature
Device Voltage
-40 to 85 C
-40 to 150 C
+5 V
Operating Junction Temperature
Input RF Power
(CW, 50  matched as in 1950 MHz application circuit)*
Thermal Resistance
+150 C
+22 dBm
285 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
The max. input power, in principle, depends upon the application frequency and the matching circuit.
1/22
ASB Inc.  [e-mail]  Tel: [phone]
Pin No.
1
2,4,5
3
6
Function
VDD
GND
RF OUT
RF IN
February 2017