ASG330 Datasheet, PDF (1/9 Pages) Advanced Semiconductor Business Inc. – DC-2500 MHz SiGe HBT Amplifier

ASG330
DC-2500 MHz SiGe HBT Amplifier
Features
·SiGe Technology
·11 dB Gain at 1950 MHz
·+20 dBm P1dB
·+43 dBm Output IP3
·3.8 dB Noise Figure
·MTTF > 100 Years
·Operate at Single +5 V Supply
·SOT-89 Surface Mount Package
Description
The ASG330 is designed for high linearity, high
gain, and low noise over a wide range of
frequency, being suitable for use in both receiver
and transmitter of wireless and wireline
telecommunication systems. The product is
manufactured using a state-of-the-art SiGe HBT
process of the company's own, making it cost-
effective and highly reliable. The amplifiers are
available in a low cost SOT-89 package
completing stringent DC and RF tests.
Package Style: SOT-89
Specifications ¹⁾
Parameters
Units
Min.
Typ.
Frequency Range
Gain ¹⁾
Input VSWR ¹⁾
Output VSWR ¹⁾
Output IP3 ²⁾
Noise Figure ¹⁾
MHz
dB
-
-
dBm
dB
250 - 2500
11
1.4
1.4
41
43
3.8
Output P1dB
dBm
18
20
Supply Current
mA
75
Supply Voltage
V
5
1) Measurement conditions are as follows: T = 25°C, V_CC = 5 V, Freq. = 1950 MHz, 50 ohm system.
2) OIP3 is measured with two tones at an output power of +10dBm/tone separated by 1MHz.
Max.
Applications
·CDMA,GSM,W-CDMA,PCS
WiBro, WLan
·PA Driver Amplifier
·Gain Block
·CATV Amplifier
·IF Amplifier
More Information
Website: www.asb.co.kr
E-mail: [e-mail]
Tel: [phone]
Fax: [phone]
ASB, Inc., 4F FI. VentureTown Bldg.,
367-17 Goijeong-Dong, Seo-Gu,
Daejon 302-120, Korea
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Supply Voltage
Operating Junction Temperature
Input RF Power (continuous) ¹⁾
Rating
-40 to + 85°C
-40 to + 150°C
8V
150°C
13 dBm
Remarks
1/9
November 2007