ASF255_17 Datasheet, PDF (1/8 Pages) Advanced Semiconductor Business Inc. – 5 ~ 3000 MHz MMIC Amplifier

ASF255
5 ~ 3000 MHz MMIC Amplifier
Features
22.4 dB Gain at 150 MHz
23 dBm P1dB at 150 MHz
42 dBm Output IP3 at 150 MHz
2.2 dB NF at 150 MHz
MTTF > 100 Years
Single Supply
Minimal External Components
Description
The ASF255, a IF gain block amplifier MMIC, has a
high linearity, high gain, and high efficiency over a
wide range of frequency, being suitable for use in
both receiver and transmitter of telecommunication
systems up to 3 GHz. It has an active bias network
for stable current over temperature and process
variation. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
ASF255
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Zo = 50 )
Parameters
Units
Typical
Frequency
MHz
70
150 300
Gain
dB
22.4 22.4 22.2
S11
dB
-15.5 -18.0 -18.0
S22
Output IP3¹⁾
dB
dBm
-15.5 -20.0 -20.0
39.0 42.0 42.0
Noise Figure
dB
2.2 2.2 2.3
Output P1dB
dBm
22.5 23.0 23.0
Current
mA
103 103 103
Device Voltage
V
+5.0 +5.0 +5.0
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
450
21.9
-16.0
-20.0
40.0
2.3
23.0
103
+5.0
900
21.0
-11.0
-13.0
38.0
2.3
22.5
103
+5.0
150
22.1
-18.0
-20.0
40.0
2.2
22.0
90
+4.5
Application Circuit
 IF (50 ~ 1000 MHz, 5 V)
 IF (50 ~ 1000 MHz, 4.5 V, 90 mA)
 SMATV (50 ~ 2150 MHz, 5 V)
 IF (50 ~ 1000 MHz, 6 V)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
Min
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
Typ
Max
150
22.4
-18
-20
42.0
2.2
23.0
103
+5.0
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (Continuous)¹⁾
Thermal Resistance
Rating
-40 to 85 C
-40 to 150 C
+7 V
+150 C
+23 dBm
92 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
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ASB Inc.  [e-mail]  Tel: [phone]
Pin Configuration
Pin No.
1
2
3
Function
RF IN
GND
RF OUT & Bias
February 2017