ASF250 Datasheet, PDF (1/5 Pages) Advanced Semiconductor Business Inc. – 5-1000 MHz MMIC Amplifier

ASF250
5-1000 MHz MMIC Amplifier
Features
·16.9 dB Gain at 150 MHz
·22 dBm P1dB at 150 MHz
·43.5 dBm Output IP3 at 150 MHz
·2.5 dB NF at 150 MHz
·MTTF > 100 Years
·Single Supply
·Minimal External Components
Typical Performance
Description
The ASF250, a IF gain block amplifier MMIC, has a
high linearity, high gain, and high efficiency over a
wide range of frequency, being suitable for use in
both receiver and transmitter of telecommunication
systems up to 1 GHz. It has an active bias network
for stable current over temperature and process
variation. The amplifier is available in an SOT-89
package and passes through the stringent DC, RF,
and reliability tests
Parameters
Units
Typical
Frequency
MHz
70 150 300 450
Gain
dB
17.0 16.9 16.7 16.6
S11
dB
-15 -20 -20 -20
S22
Output IP3
dB
dBm
-18 -20 -20 -19
40.0¹⁾ 43.5¹⁾ 43.5¹⁾ 40.5¹⁾
Noise Figure
dB
2.5 2.5 2.7 2.7
Output P1dB
dBm
22
22
22
22
Current
mA
103 103 103 103
Device Voltage
V
5
5
5
5
1) OIP3 is measured with two tones at an output power of +10dBm/tone separated by 1 MHz
2) OIP3 is measured with two tones at an output power of +9dBm/tone separated by 1 MHz.
900
16.1
-14.5
-16
38.5¹⁾
2.7
22
103
5
150
16.8
-20
-20
41.5²⁾
2.4
21
90
4.5
ASF250
Package Style: SOT-89
Application Circuit
·50 ~ 1000 MHz (5 V)
·50 ~ 1000 MHz (4.5 V, 90 mA)
·50 ~ 1000 MHz (6 V)
Product Specifications
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
Min
Typ
Max
MHz
150
dB
16.9
dB
-20
dB
-20
dBm
43.5
dB
2.5
dBm
22
mA
103
V
5
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (Continuous)
Rating
-40 to +85°C
-40 to +150°C
+6 V
+150°C
20 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
Pin No.
1
2
3
Function
RF IN
GND
RF OUT / Bias
1/5
ASB Inc. · [e-mail] · Tel: [phone]
October 2012