MT200DT18L2 Datasheet, PDF (2/5 Pages) Jiangsu APT Semiconductor Co.,Ltd – Three Phase Bridge + Thyristor

MT200DT18L2
◆Thyristor
Maximum Ratings
Symbol
Item
I_TAV
Average On-State Current
I_TSM
i²t
Visol
Tvj
Tstg
Mt
Mt
Ms
di/dt
dv/dt
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Conditions
Tc=93℃, Single Phase half wave
180^o conduction
TVJ=45℃ t=10ms (50Hz), sine
VR=0
a.c.50HZ;r.m.s.;1 min
To terminals(M4)
To terminals(M6)
To heatsink(M6)
T_VJ=T_VJM, V_D=1/2V_DRM ,I_G =100mA
d_iG/d_t=0.1A/μs
T_J=T_VJM,V_D=2/3V_DRM,linear voltage
rise
Values
200
1900
18050
3000
-40 to +125
-40 to +125
2±15%
5±15%
5±15%
200
500
Units
A
A
A²s
V
℃
℃
Nm
Nm
A/μs
V/μs
Electrical and Thermal Characteristics
Symbol
Item
V_TM
I_RRM/I_DRM
V_GT
I_GT
Rth(j-c)
Rth(c-s)
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Thermal Impedance, max.
Thermal Impedance, max.
Conditions
T=25℃ I_T =200A
Values
Min. Typ. Max.
1.40
T_VJ=T_VJM ,V_R=V_RRM ,V_D
=V_DRM
100
T_VJ =25℃ , V_D =6V
T_VJ =25℃ , V_D =6V
Junction to Case
Case to Heatsink
3
150
0.14
0.06
Units
V
mA
V
mA
℃/W
℃/W
Document Number: S-M0066
Rev.1.0, May.31, 2013
2
www.apt-semi.com