MF100C12F1 Datasheet, PDF (2/3 Pages) Jiangsu APT Semiconductor Co.,Ltd – FRED Modules

MF100C12F1
Electrical Characteristics
Symbol
I_RM
V_F
trr
trr
I_RRM
trr
I_RRM
Conditions
V_R=1200V
V_R=1200V, T_J=125°C
I_F=100A
I_F=100A, T_J=125°C
I_F=1A, V_R=30V, di_F/dt=-200A/μs
V_R=600V, I_F=100A, di_F/dt=-200A/μs, T_J=25°C
V_R=600V, I_F=100A, di_F/dt=-200A/μs, T_J=125°C
Values
Min. Typ. Max.
--
--
1
--
--
10
-- 1.58
-- 1.35
--
55
--
-- 135 --
--
10
--
-- 380 --
--
21
--
Units
mA
mA
V
V
ns
ns
A
ns
A
Performance Curves
200
A
600
VR=600V
ns
TJ=125℃
120
125℃
80
25℃
40
IF
0
0 V_F
0.8
1.6 V
2.4
Fig1. Forward Voltage Drop vs Forward Current
120
A
VR=600V
TJ=125℃
60
I_RRM
0
0 di_F/dt
IF=200A
IF=100A
IF=50A
500
A/us 1000
Fig3. Reverse Recovery Current vs di_F/dt
Document Number: S-M0069
Rev.1.0, May.31, 2013
2
300
IF=200A
IF=100A
IF=50A
trr
0
0 di_F/dt
500
A/us 1000
Fig2. Reverse Recovery Time vs di_F/dt
12
VR=600V
uc
TJ=125℃
8
IF=200A
4
IF=100A
IF=50A
Qrr
0
0 di_F/dt
500
A/us 1000
Fig4. Reverse Recovery Charge vs di_F/dt
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