TD4A60S Datasheet, PDF (3/5 Pages) Apollo Electron Co., Ltd. – Sensitive Gate Triac

TD4A60S
Fig 1. Gate Characteristics
10¹
V_GK = 5V
25℃
10⁰
P_G(AV) = 0.5W
P_GK = 5W
10^-1
10¹
V_GD = 0.2V
10²
10³
Gate Current [mA]
Fig 3. On State Current vs.
Maximum Power Dissipation
7
6
π ^θ 2π
θ
5
360°
4
θ : Conduction Angle
3
2
1
0
0
1
2
3
RMS On-State Current [A]
θ = 180 ^o
θ = 150 ^o
θ = 120 ^o
θ = 90 ^o
θ = 60 ^o
θ = 30 ^o
4
5
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
35
30
25
20
60Hz
15
10
50Hz
5
0
10⁰
10¹
10²
10³
Time (cycles)
Fig 2. On-State Voltage
10²
10¹
125 ^oC
10⁰
25 ^oC
10^-1
0.5
1.0
1.5
2.0
2.5
3.0
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
120
π ^θ 2π
110
θ
360°
θ : Conduction Angle
100
0
1
2
3
RMS On-State Current [A]
θ = 30^o
θ = 60^o
θ = 90^o
θ = 120^o
θ = 150^o
θ = 180^o
4
5
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
1
0.1
-50
0
50
100
Junction Temperature [ ^oC]
150
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