CD6C60S Datasheet, PDF (2/5 Pages) Apollo Electron Co., Ltd. – Sensitive Gate Silicon Controlled Rectifiers

CD6C60S
Electrical Characteristics ( T_j = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min. Typ. Max.
I_DRM
Repetitive Peak Off-State
Current
V_AK = V_DRM
T_j = 125 °C _─
─
100
uA
V_TM
Peak On-State Voltage (1)
I_GT
Gate Trigger Current (2)
I_T = 4 A
V_AK =12V(DC), R_L=100 Ω
─
─
1.4
V
─
─
200
uA
V_GT
Gate Trigger Voltage (2)
V_D = 12V(DC), R_L=100 Ω
─
─
1.2
V
V_GD
Non-Trigger Gate Voltage (1) V_AK = 12 V, R_L=100 Ω
T_j =125 °C
0.1
─
─
V
dv/dt
Critical Rate of Rise Off-State ^{Linear slope upto} D^{V =V}DRM ^67% ,
Voltage
Gate open
T_j = 125°C
10
─
─
V/us
I_H
Holding Current
VD=24V, IGT=50mA
─
─
5
mA
2/5