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| CR100-8 Datasheet, PDF (1/5 Pages) Apollo Electron Co., Ltd. – Sensitive Gate Silicon Controlled Rectifiers | |||
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CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol
â 3. Anode
â¼
â 2.Gate
1.Cathode â
BVDRM = 600V
IT(RMS) = 1.0A
ITSM = 10A
Features
â Repetitive Peak Off-State Voltage : 600V
â R.M.S On-State Current ( IT(RMS)= 1.0 A )
â Low On-State Voltage (1.3V(Typ.))
General Description
TO-92
1
2
3
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as
small motor control, gate driver for large thyristor, sensing and detecting circuits.
This device may substitute for MCR100-6, MCR100-8 series.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
sine wave,50 to 60Hz
half sine wave : TC = 83 °C
All Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
TA = 25 °C, pulse width ⤠1.0ã²
TA = 25 °C, t = 8.3ms
TA = 25 °C, pulse width ⤠1.0ã²
TA = 25 °C, pulse width ⤠1.0ã²
Ratings
600
0.5
1.0
10
0.415
2
0.1
1
5.0
- 40 ~ 110
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2010. Rev.1
1/5
copyright @ Apollo Electron Co., Ltd. All rights reserved.
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