CD8C60SR Datasheet, PDF (1/4 Pages) Apollo Electron Co., Ltd. – Sensitive Gate Silicon Controlled Rectifiers

CD8C60SR
Sensitive Gate Silicon Controlled Rectifiers
Symbol
○ 2. Anode
▼
○ _3.Gate
1.Cathode ○
BV_DRM = 600V
I_T(RMS) = 8 A
I_TSM = 70A
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I_T(RMS)= 8 A )
TO-252
123
General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection, motor control circuit in power tool, inrush cur-
rent limit circuit and heating control system.
ABSOLUTE MAXIMUM RATINGS
Paramter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-State Voltage T j=25℃
Repetitive Peak Reverse Voltage
RMS On-State Current (180° conduction angle) TI=105℃
Average On-Stage Current (180° conduction angle) TI=105℃
Non Repetitive Surge Peak On-State Current(T j=25℃)
I²t Value For Fusing tp=10ms
tp=10ms
tp=8.3ms
Critical Rate Of Rise Of On-State Current IG=2ｘIGT, tr≤100ns, f=50Hz, T j=110℃
Peak Gate Current tp=20us, T j=125℃
Average Gate Power Dissipation T j=125℃
Symbol
Tstg
Tj
VDRM
VRRM
IT(RMS)
IT(AV)
ITSM
I²t
dl/dt
IGM
PG(AV)
Value
-40~150
-40~110
600
600
8
5
70
73
24.5
50
4
1
Units
℃
℃
V
V
A
A
A
A²s
A/us
A
W
O c t, 2010. Rev.0
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copyright @ Apollo Electron Co., Ltd. All rights reserved.