SLD-68-026 Datasheet, PDF (1/1 Pages) API Delevan – Planar Photodiode with BG-18 Filter

Features
 Planar photodiode with BG-18 filter
 Low capacitance
 Fast switching time
 Low leakage current
 Linear response vs irradiance
 TO-46 base with epoxy dome lens
Description
The SLD-68-026 Silicon planar photodiode with added
BG-18 filter is designed for visible light detection, TO-46
package with epoxy dome lens allow wide angle of
detection. The photodiode is suitable for photopic
sensing applications such as: color sensing, analytics,
safety equipment and special sensors for automation.
Low dark current and low capacitance make it the
ideal detector for visible light detection applications.
Absolute Maximum Ratings
Storage Temperature
-20C to +75C
Operating Temperature
-20C to +75C
Soldering Temperature (3)
260C
Notes: (1) Ee = light source @ 2854 K
(2) Ee = light source @  = 560 nm
(3) >2 mm from case for <5 sec.
Normalized Spectral Response
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
SLD-68-026
Planar Photodiode with BG-18 Filter
Note: T ab removed
ø 5.33
4.2
2.8 max.
25 min.
Anode +
2.54
0.4 - 0.5
Cathode -
(common to case)
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
Dimensions in mm. T olerance: +/-0.13
Directional Sensitivity Characteristics
40° 30° 20° 10° 1.0
50°
0.8
Half Angle = 40°
60°
0.6
0.4
70°
80°
0.2
90°
0.0
100°
1.0 0.8 0.6 0.4
20° 40° 60° 80° 100° 120°
Electrical Characteristics (T_A=25C unless otherwise noted)
Symbol
Parameter
MIN TYP
I_SC
Short Circuit Current
7.5 11.0
V_OC
Open Circuit Voltage
I_D Reverse Dark Current:
C_J
Junction Capacitance
t_R
Rise Time
0.35
40
1.0
t_F
Fall Time
1.5
TC_I
Temp. Coef., I_SC
+0.2
V_BR
Reverse Breakdown Voltage
50
_P Maximum Sensitivity Wavelength
550
_R
Sensitivity Spectral Range
400
_1/2
Acceptance Half Angle
40
Specifications subject to change without notice.
Advanced Photonix Canada Inc.,
300 St-Sacrement
Suite 519
Montréal, QC, Canada H2Y 1X4
Page 1
MAX
100
700
UNITS
TEST CONDITIONS
A VR=0V, Ee=25mW/cm² (1)
V Ee=25mw/cm² (1)
nA V_R= 5V, Ee=0
pF V_R=0, Ee=0, f=1MHz
s V_R=10V, R_L=1k (2)
s V_R=10V, R_L=1k (2)
%/C (1)
V I_R=100A
nm
nm
deg (off center-line)
REV 04/04-14
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Fax: [phone]
http://www.advancedphotonix.com