PB51 Datasheet, PDF (2/4 Pages) Cirrus Logic – POWER OPERATIONAL AMPLIFIER

ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PB51 • PB51A
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V_S to –V_S
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at T_C = 25°C¹
INPUT VOLTAGE, referred to COM
TEMPERATURE, pin solder—10s max.
TEMPERATURE, junction¹
TEMPERATURE RANGE, storage
OPERATING TEMPERATURE RANGE, case
300V
2.0A
83W
±15V
260°C
175°C
–40 to +85°C
–25 to +85°C
SPECIFICATIONS
PARAMETER
TEST CONDITIONS²
PB51
PB51A
MIN TYP MAX MIN TYP MAX UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
CLOSED LOOP GAIN RANGE
GAIN ACCURACY, internal Rg, Rf
GAIN ACCURACY, external Rf
PHASE SHIFT
OUTPUT
VOLTAGE SWING
VOLTAGE SWING
VOLTAGE SWING
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD
SETTLING TIME to .1%
POWER BANDWIDTH
SMALL SIGNAL BANDWIDTH
SMALL SIGNAL BANDWIDTH
Full temperature range³
AV = 3
AV = 10
f = 10kHz, AVC_L = 10, CC = 22pF
f = 200kHz, AVC_L = 10, CC = 22pF
Io = 1.5A (PB58), 2A (PB58A)
Io = 1A
Io = .1A
Full temperature range
Full temperature range
RL = 100, 2V step
VC = 100 Vpp
CC = 22pF, AV = 25, Vcc = ±100
CC = 22pF, AV = 3, Vcc = ±30
±.75 ±1.75
–4.5 –7
25
50
*
3
3
10
25
*
±10 ±15
±15 ±25
10
60
*
±1.0 V
*
* mV/°C
*
k
*
pF
*
*
V/V
*
*
%
*
*
%
*
°
*
°
VS–11
VS–10
VS–8
1.5
50
160
VS –8
VS –7
VS –5
100
2200
2
320
100
1
VS–15 VS–11
*
*
*
*
2.0
75
*
*
*
240
*
*
*
V
V
V
A
V/µs
pF
µs
kHz
kHz
MHz
POWER SUPPLY
VOLTAGE, ±VS⁴
CURRENT, quiescent
Full temperature range
VS = ±15
VS = ±60
VS = ±150
±15⁶ ±60 ±150
*
*
11
*
12
*
14
18
*
*
V
mA
mA
*
mA
THERMAL
RESISTANCE, AC junction to case5
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temp. range, f > 60Hz
Full temp. range, f < 60Hz
Full temperature range
Meets full range specifications
1.2 1.3
*
1.6 1.8
*
30
*
–25
25
85
*
*
* °C/W
* °C/W
°C/W
*
°C
NOTES: * The specification of PB51A is identical to the specification for PB51 in applicable column to the left.
1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF (Mean Time to Failure).
2. The power supply voltage specified under typical (TYP) applies, T_C = 25°C unless otherwise noted.
3. Guaranteed by design but not tested.
4. +V_S and –V_S denote the positive and negative supply rail respectively.
5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
6. +V_S/–V_S must be at least 15V above/below COM.
CAUTION ^{The PB51 is constructed from MOSFET transistors. ESD handling procedures must be observed.}
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to
temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: [phone]
2