PA89 Datasheet, PDF (2/4 Pages) Cirrus Logic – HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS

ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PA89 • PA89A
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PARAMETER
SUPPLY VOLTAGE, +V_S to –V_S
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at T_C = 25°C
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder - 10s max
TEMPERATURE, junction²
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
TEST CONDITIONS ¹
PA89
MIN TYP MAX
INPUT
OFFSET VOLTAGE, initial
.5
2
OFFSET VOLTAGE, vs. temperature Full temperature range
10
30
OFFSET VOLTAGE, vs. supply
7
OFFSET VOLTAGE, vs. time
75
BIAS CURRENT, initial³
5
50
BIAS CURRENT,vs. supply
.01
OFFSET CURRENT, initial³
5
50
INPUT IMPEDANCE, DC
10⁵
INPUT CAPACITANCE
4
COMMON MODE VOLTAGE RANGE⁴ Full temperature range
±V_S 50
COMMON MODE REJECTION, DC
Full temperature range, V_CM = ±90V 96
110
INPUT NOISE
10kHz BW, R_S = 10K, C_C = 15pF
4
GAIN
OPEN LOOP GAIN at 10Hz
GAIN BANDWIDTH PRODUCT
POWER BANDWIDTH
PHASE MARGIN
R_L = 10k, C_C = 15pF
108 120
R_L = 10k, C_C = 15pF, A_V = 100
10
R_L = 10k, C_C = 15pF, V_O = 500V p-p
5
Full temperature range, A_V = 10
60
OUTPUT
VOLTAGE SWING⁴
VOLTAGE SWING⁴
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD, Av = 10
CAPACITIVE LOAD, Av>10
SETTLING TIME to .1%
I_O = 75mA
Full temperature range, I_O = 20mA
Full temperature range
C_C = 15pF, A_V = 100
Full temperature range
Full temperature range
R_L = 10KΩ, 10V step, Av = 10
±V_S 45 ±V_S 30
±V_S 20 ±V_S 12
75
12
16
2
1
SOA
POWER SUPPLY
VOLTAGE, V_S4
CURRENT, quiescent
Full temperature range
±75 ±500 ±600
4.8 6.0
THERMAL
RESISTANCE, AC, junction to case⁵
RESISTANCE, DC, junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temperature range, F > 60Hz
Full temperature range, F < 60Hz
Full temperature range
Meets full range specifications
2.1 2.3
3.3 3.5
15
–25
+85
1200V
100mA
40W
±25V
±V_S 25V
300°C
150°C
–65 to 125°C
–55 to 125°C
PA89A
MIN TYP MAX UNITS
.25
.5
mV
5
10 µV/°C
*
µV/V
*
µV/kh
3
10
pA
*
pA/V
3
20
pA
*
MΩ
*
pF
*
V
*
*
dB
µV RMS
*
*
*
*
*
dB
MHz
kHz
°
*
*
*
*
*
*
*
*
V
V
mA
V/µs
*
nF
*
µs
*
*
*
*
V
*
mA
*
*
*
*
*
°C/W
*
°C/W
°C/W
*
°C
NOTES: * The specification of PA89A is identical to the specification for PA89 in applicable column to the left.
1. Unless otherwise noted: T_C = 25°C, C_C = 68pF, R_C = 220Ω, and V_S = ±500V. Input parameters for bias currents and offset volt-
age are ± values given.
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF.
3. Doubles for every 10°C of temperature increase.
4. +V_S and –V_S denote the positive and negative supply rail respectively.
5. Rating applies only if the output current alternates between both output transistors at a rate faster than 60Hz.
CAUTION
The PA89 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: [phone]
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