AO4914 Datasheet, PDF (7/8 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4914, AO4914L
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
4V
25
10V
16
4.5V
20
3.5V
12
15
8
10
V_GS=3V
4
5
V_DS=5V
125°C
25°C
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
V_DS (Volts)
Fig 1: On-Region Characteristics
V_GS(Volts)
Figure 2: Transfer Characteristics
28
26
V_GS=4.5V
24
22
20
18
V_GS=10V
16
14
0
5
10
15
20
I_D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
40
I_D=8.5A
30
125°C
20
10
2
25°C
4
6
8
10
V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.6
V_GS=10V
I_D=8.5A
1.4
V_GS=4.5V
1.2
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V_SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.