AOP609 Datasheet, PDF (6/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOP609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
20
15
10
5
0
0
-6.0V
-5.0V
-10V
-4.5V
-4.0V
-3.5V
V_GS=-3.0V
1
2
3
4
5
-V_DS (Volts)
Fig 1: On-Region Characteristics
15
V_DS=-5V
12
9
6
3
125°C
25°C
0
0
1
2
3
4
5
-V_GS(Volts)
Figure 2: Transfer Characteristics
120
V_GS=-4.5V
110
100
V_GS=-10V
90
80
0
2
4
6
8
10
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
180
I_D=-3.5A
160
140
125°C
120
100
25°C
80
60
2 3 4 5 6 7 8 9 10
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
2
V_GS=-10V
1.8
I_D=-3.5A
1.6
1.4
1.2
V_GS=-4.5V
1
I_D=-2.8A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V_SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.