AOT8N50 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – 500V, 8A N-Channel MOSFET

AOT8N50/AOTF8N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V_DS=400V
12
I_D=8A
10000
1000
9
100
6
10
3
C_iss
C_oss
C_rss
0
0
100
5
10 15 20 25 30 35
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1
0.1
1
10
100
V_DS (Volts)
Figure 8: Capacitance Characte₂ri₀st₀ics
16
100
10 R_DS(ON)
limited
1
0.1
T_J(Max)=150°C
T_C=25°C
10µs
100µs
1ms
10ms
0.1s
DC
0.01
1
10
100
1000
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT8N50 (Note F)
10 _RDS(ON)
limited
10µs
100µs
1
0.1
0.01
1
DC
T_J(Max)=150°C
T_C=25°C
1ms
10ms
0.1s
1s
10s
10
100
V_DS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N50 (Note F)
1000
10
8
6
4
2
0
0
25
50
75
100 125 150
T_CASE (°C)
Figure 11: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
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