AON7522E Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON7522E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=15V
8
I_D=20A
2500
2000
C_iss
6
1500
4
2
0
0
5
10 15 20 25 30 35
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1000.0
100.0
10.0
R_DS(ON)
1.0
0.1
DC
T_J(Max)=150°C
T_C=25°C
10µs _10µs
100µs
1ms
10ms
100ms
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=T_on/T
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
1 R_θJC=4°C/W
1000
C_oss
500
C_rss
0
0
10
20
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
200
160
T_J(Max)=150°C
T_C=25°C
120
17
5
80
2
10
40
0
0.0001 0.001
0.01
0.1
1₀
10
Figure
10:
Single
Pulse Width (s)
Pulse Power Rating
Ju¹n⁸ction-to-Case
(Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P_D
0.01
0.001
Single Pulse
T_on
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Mar 2012
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