AON7430L Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON7430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=15V
I_D=20A
8
6
4
2
0
0
2
4
6
8
10 12 14
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1200
1000
C_iss
800
600
400
200
C_oss
0 ^Crss
0
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000.0
200
100.0
10.0
R_DS(ON)
limited
1.0
10µs
DC
10µs
100µs
1ms
10ms
0.1 _{TJ(Max)=150°C}
T_C=25°C
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
160
T_J(Max)=150°C
T_C=25°C
120
17
5
80
2
10
40
0
0.0001 0.001 0.01
0.1
1
10
0
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
Jun¹c⁸tion-to-
Case (Note F)
10
D=T_on/T
In descending order
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJC=5°C/W
40
1
0.1
P_D
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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