AON6758 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON6758
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
V_DS=15V
8
I_D=20A
6
4
2
0
0
5
10
15
20
25
30
Q_g (nC)
Figure 7: Gate-Charge Characteristics
2500
C_iss
2000
1500
1000
C_oss
500
0
C_rss
0
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000.0
500
100.0
10.0
R_DS(ON)
1.0
10µs _10µs
100µs
DC
1ms
100ms
0.1
T_J(Max)=150°C
T_C=25°C
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
400
T_J(Max)=150°C
T_C=25°C
300
17
5
200
2
10
100
0
0.0001 0.001 0.01
0.1
0¹
10
Figure
10:
Single
Pulse Width (s)
Pulse Power Rating
Jun¹c⁸tion-to-Case
(Note F)
10
D=T_on/T
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
R_θJC=3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
P_D
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: April 2012
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