AOL1418 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=15V
8
I_D=20A
6
4
2
0
0
5
10
15
20
25
30
Q_g (nC)
Figure 7: Gate-Charge Characteristics
2400
2000
1600
1200
800
400
0
0
C_oss
C_iss
C_rss
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
R_DS(ON)
limited
100
10
10μs
1ms 100μs
DC
1
T_J(Max)=175°C
T_A=25°C
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
400
T_J(Max)=175°C
T_A=25°C
300
200
100
0
0.0001 0.001 0.01 0.1
1
10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJC=1.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P_D
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.